• DocumentCode
    1941589
  • Title

    Study on Device Matrix Array structure for MOSFET gm variability evaluation

  • Author

    Terada, Kazuo ; Takeda, Ryo ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio ; Mogami, Tohru

  • Author_Institution
    Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
  • fYear
    2012
  • fDate
    19-22 March 2012
  • Firstpage
    73
  • Lastpage
    76
  • Abstract
    The effect of Device Matrix Array structure on MOSFET gm-variability measurement is studied. One of the two transfer gates, which are connected to an MOSFET source terminal for both Kelvin measurement and addressable access, is removed. This modification enables us to measure and to reduce the effect of the metal wiring resistance on Kelvin measurement, and thus to estimate the intrinsic MOSFET gm-variability.
  • Keywords
    MOSFET; semiconductor device measurement; Kelvin measurement; MOSFET gm variability evaluation; MOSFET gm-variability measurement; MOSFET source terminal; device matrix array structure effect; metal wiring resistance; transfer gates; Electrical resistance measurement; Force; Force measurement; MOSFET circuits; Nickel; Reliability; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4673-1027-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2012.6190621
  • Filename
    6190621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1941589