DocumentCode :
1941589
Title :
Study on Device Matrix Array structure for MOSFET gm variability evaluation
Author :
Terada, Kazuo ; Takeda, Ryo ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio ; Mogami, Tohru
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
fYear :
2012
fDate :
19-22 March 2012
Firstpage :
73
Lastpage :
76
Abstract :
The effect of Device Matrix Array structure on MOSFET gm-variability measurement is studied. One of the two transfer gates, which are connected to an MOSFET source terminal for both Kelvin measurement and addressable access, is removed. This modification enables us to measure and to reduce the effect of the metal wiring resistance on Kelvin measurement, and thus to estimate the intrinsic MOSFET gm-variability.
Keywords :
MOSFET; semiconductor device measurement; Kelvin measurement; MOSFET gm variability evaluation; MOSFET gm-variability measurement; MOSFET source terminal; device matrix array structure effect; metal wiring resistance; transfer gates; Electrical resistance measurement; Force; Force measurement; MOSFET circuits; Nickel; Reliability; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
ISSN :
1071-9032
Print_ISBN :
978-1-4673-1027-7
Type :
conf
DOI :
10.1109/ICMTS.2012.6190621
Filename :
6190621
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1941589
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