• DocumentCode
    1941612
  • Title

    Electron Avalanche Injection in Thin Nitrided Sio2 Films

  • Author

    Severi, Maurizio ; Impronta, Maurizilo ; Bianconi, Marco

  • Author_Institution
    CNR -Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    845
  • Lastpage
    848
  • Abstract
    Electron avalanche injection has been used to study charge trapping in thin (10-30 nm) ammonia-annealed silicon dioxide films as a function of process conditions. While electron traps (with a cross section of ~ 10-16 cm2) increase with nitridation temperature and time, the generation of interfacial positive charge (``turn-around effect´´) is greatly reduced or totally eliminated under severe nitridation conditions.
  • Keywords
    Annealing; Capacitors; Dielectric substrates; Dielectric thin films; Electron traps; Nitrogen; Semiconductor films; Silicon compounds; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1941612