Title :
A proposition on test circuit structures using selectively metal-covered transistors for a laser irradiation failure analysis
Author_Institution :
Dept. of Electr. & Electron. Eng., Shizuoka Inst. of Sci. & Technol., Fukuroi, Japan
Abstract :
A quick and easy laser experiment for photocurrent induced failure investigations has been described. In order to focus a laser beam on a desired transistor in complex LSI circuits, novel test circuit structures using selectively metal-covered transistors have been proposed. Photocurrent induced failures have been successfully observed in a target CMOS inverter with an SR Flip Flop detector. The laser irradiation failures have also been observed in a selectively metal-covered CMOS SRAM test cell.
Keywords :
CMOS memory circuits; SRAM chips; failure analysis; flip-flops; integrated circuit reliability; integrated circuit testing; invertors; photoconductivity; radiation effects; transistor circuits; CMOS inverter; SR flip flop detector; complex LSI circuit; laser beam; laser experiment; laser irradiation failure analysis; photocurrent induced failure; selectively metal-covered CMOS SRAM test cell; selectively metal-covered transistor; test circuit structure; CMOS integrated circuits; CMOS technology; Clocks; Inverters; Junctions; Logic gates; Random access memory;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190622
