Title :
Nonlinear dynamics of directly-modulated semiconductor lasers: the significance of resistive heating
Author :
Lim, C.G. ; Iezekiel, S. ; Snowden, C.M.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
Simulated results based on a carrier heating model revealed the importance of incorporating bandgap shrinkage and resistive heating in order to achieve excellent agreement between calculated and measured nonlinear behavior of laser diodes.
Keywords :
bifurcation; carrier relaxation time; distributed feedback lasers; energy gap; hot carriers; laser theory; optical chaos; optical modulation; semiconductor lasers; Auger recombination coefficient; bandgap shrinkage; carrier heating model; carrier relaxation time; directly-modulated semiconductor lasers; distributed-feedback LD; large-signal direct-modulation; laser diodes; lattice temperature; nonlinear dynamics; resistive heating; single-mode rate equations model; Chaos; Heating; Laser noise; Optical refraction; Optical sensors; Optical variables control; Photonic band gap; Semiconductor device noise; Semiconductor lasers; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967822
