Title :
Over-220-GHz-f/sub T/-and-f/sub max/ InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter
Author :
Yamahata, S. ; Kurishima, K. ; Ito, H. ; Matsuoka, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Superior high-frequency characteristics with peak f/sub T/ of 228 GHz and f/sub max/ of 227 GHz are demonstrated for self-aligned InP/InGaAs DHBTs with a novel collector structure and a new hexagonal emitter geometry. These improvements in f/sub T/ and f/sub max/ are due to the thickness optimization of the base and collector layers and the reduction of parasitic base resistance and base/collector capacitance through the use of the new emitter geometry.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 220 GHz; InP-InGaAs; base/collector capacitance; cut off frequency; double-heterojunction bipolar transistors; hexagonal emitter; high-frequency characteristics; maximum frequency; parasitic base resistance; self-aligned DHBTs; thickness optimization; Bipolar transistors; Double heterojunction bipolar transistors; Electrodes; Epitaxial growth; Epitaxial layers; Fabrication; Geometry; Indium gallium arsenide; Indium phosphide; Wet etching;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528985
