Title :
Electrical Characteristics and Reliability of Thin Oxide-Nitride-Oxide Stacked Films
Author :
Thanh, L. Do ; Balk, P.
Author_Institution :
Institute of Semiconductor Electronics, Aachen Technical University, D-5100 Aachen, FRG
Abstract :
Electronic conduction, charge trapping and dielectric breakdown have been studied on thin stacked layers of Si02-Si3N4 - Si02 with Al or poly-Si gate on Si. These structures appear to combine the attractive properties of Si02 and Si3N4 single layers as long as they are operated at fields below 5 MVcm-1
Keywords :
Capacitors; Conductive films; Electric breakdown; Electric variables; Electron traps; Insulation; Oxidation; Semiconductor device reliability; Semiconductor films; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
