• DocumentCode
    1941644
  • Title

    Electrical Characteristics and Reliability of Thin Oxide-Nitride-Oxide Stacked Films

  • Author

    Thanh, L. Do ; Balk, P.

  • Author_Institution
    Institute of Semiconductor Electronics, Aachen Technical University, D-5100 Aachen, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    837
  • Lastpage
    840
  • Abstract
    Electronic conduction, charge trapping and dielectric breakdown have been studied on thin stacked layers of Si02-Si3N4 - Si02 with Al or poly-Si gate on Si. These structures appear to combine the attractive properties of Si02 and Si3N4 single layers as long as they are operated at fields below 5 MVcm-1
  • Keywords
    Capacitors; Conductive films; Electric breakdown; Electric variables; Electron traps; Insulation; Oxidation; Semiconductor device reliability; Semiconductor films; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1941644