• DocumentCode
    1941670
  • Title

    Monolithically integrated 10Gbit/sec Silicon modulator with driver in 0.25μm SiGe:C BiCMOS

  • Author

    Zimmermann, L. ; Thomson, David J. ; Goll, B. ; Knoll, D. ; Lischke, S. ; Gardes, Frederic Y. ; Hu, Ya ; Reed, Graham T. ; Zimmermann, Horst ; Porte, H.

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2013
  • fDate
    22-26 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present the first monolithic photonic integration in the electronic frontend of a high-performance BiCMOS technology. 10Gbit/sec operation of a Silicon Mach-Zehnder modulator device with 8dB extinction in dual-drive is demonstrated.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; carbon; driver circuits; elemental semiconductors; modulators; silicon; Mach-Zehnder modulator; Si; SiGe:C; bit rate 10 Gbit/s; driver; dual-drive; electronic frontend; high-performance BiCMOS technology; monolithic photonic integration; monolithically integrated silicon modulator; size 0.25 mum;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
  • Conference_Location
    London
  • Electronic_ISBN
    978-1-84919-759-5
  • Type

    conf

  • DOI
    10.1049/cp.2013.1441
  • Filename
    6647634