DocumentCode :
1941670
Title :
Monolithically integrated 10Gbit/sec Silicon modulator with driver in 0.25μm SiGe:C BiCMOS
Author :
Zimmermann, L. ; Thomson, David J. ; Goll, B. ; Knoll, D. ; Lischke, S. ; Gardes, Frederic Y. ; Hu, Ya ; Reed, Graham T. ; Zimmermann, Horst ; Porte, H.
Author_Institution :
IHP, Frankfurt (Oder), Germany
fYear :
2013
fDate :
22-26 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
We present the first monolithic photonic integration in the electronic frontend of a high-performance BiCMOS technology. 10Gbit/sec operation of a Silicon Mach-Zehnder modulator device with 8dB extinction in dual-drive is demonstrated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; driver circuits; elemental semiconductors; modulators; silicon; Mach-Zehnder modulator; Si; SiGe:C; bit rate 10 Gbit/s; driver; dual-drive; electronic frontend; high-performance BiCMOS technology; monolithic photonic integration; monolithically integrated silicon modulator; size 0.25 mum;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
Type :
conf
DOI :
10.1049/cp.2013.1441
Filename :
6647634
Link To Document :
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