DocumentCode :
1941685
Title :
20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector
Author :
Pantouvaki, M. ; Verheyen, P. ; Lepage, G. ; De Coster, J. ; Yu, Haoyong ; De Heyn, P. ; Absil, P. ; Van Campenhout, J.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2013
fDate :
22-26 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate the monolithic integration of a 20Gb/s silicon ring modulator with low darkcurrent Ge monitor photodetectors. The wavelength exhibiting optimum modulation performance can be tracked by measuring the photocurrent of monitor photodetectors implemented at the through and drop port of the ring modulator.
Keywords :
elemental semiconductors; germanium; optical modulation; photoconductivity; photodetectors; silicon; wavelength division multiplexing; bit rate 20 Gbit/s; drop port; low darkcurrent Ge monitor photodetectors; monolithic integration; photocurrent; silicon ring modulator; wavelength exhibiting optimum modulation performance;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
Type :
conf
DOI :
10.1049/cp.2013.1442
Filename :
6647635
Link To Document :
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