DocumentCode
1941747
Title
Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor
Author
Miura-Mattausch, M.
Author_Institution
Siemens AG, Corporation Research and Development, Munich, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
909
Lastpage
912
Abstract
It is shown that the current gain increases for reduced emitter sizes of self-aligned bipolar transistors with polysilicon emitter contact. This phenomenon is explained by the difference between the polysilicon contact area and the effective emitter area derived from electrical data.
Keywords
Bipolar transistors; Circuit synthesis; Contacts; Current measurement; Doping; Research and development; Silicon compounds; Size measurement; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436778
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