Title :
New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor
Author :
Tamaki, Yoichi ; Ito, Masaki ; Hashino, Masaru ; Kawamoto, Yoshifumi
Author_Institution :
Consortium for Adv. Semicond. Mater. & Related Technol. (CASMAT), Kokubunji, Japan
Abstract :
We have developed a new test method for evaluating low-k materials. The method uses two kinds of new test structures. One is a modified gated pn-junction diode and the other is a modified field MOS transistor. Three kinds of low-k materials were evaluated by using the test structures, and electrical characteristics for these materials were successfully measured. The advantage of the new method was discussed.
Keywords :
MOSFET; low-k dielectric thin films; p-n junctions; semiconductor device testing; semiconductor diodes; electrical characteristic; field MOS transistor; gated pn-junction diode; low-k dielectric film; low-k material; test method; test structure; Copper; Logic gates; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190632
