Title :
Improved precision methodology for access resistance extraction using Kelvin test structures
Author :
Cros, Antoine ; Morin, Gérard ; Castaneda, Giancarlo ; Dieudonné, François ; Rosa, Julien
Author_Institution :
TR&D/STD/TPS/ECR, STMicroelectron., Crolles, France
Abstract :
An improved methodology for MOSFETs access resistance extraction using Kelvin test structures is presented. By a drastic reduction of the influence of the device stochastic variations, along with an improved methodology for sub 50nm technologies, one site fast inline extraction can be performed with precision, allowing measurement of systematic series resistance variations on wafer.
Keywords :
MOSFET; optimisation; stochastic processes; Kelvin test structures; MOSFET; access resistance extraction; device stochastic variations; size 50 nm; wafer; Length measurement; Resistance; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190634
