DocumentCode
1941892
Title
Improved precision methodology for access resistance extraction using Kelvin test structures
Author
Cros, Antoine ; Morin, Gérard ; Castaneda, Giancarlo ; Dieudonné, François ; Rosa, Julien
Author_Institution
TR&D/STD/TPS/ECR, STMicroelectron., Crolles, France
fYear
2012
fDate
19-22 March 2012
Firstpage
146
Lastpage
151
Abstract
An improved methodology for MOSFETs access resistance extraction using Kelvin test structures is presented. By a drastic reduction of the influence of the device stochastic variations, along with an improved methodology for sub 50nm technologies, one site fast inline extraction can be performed with precision, allowing measurement of systematic series resistance variations on wafer.
Keywords
MOSFET; optimisation; stochastic processes; Kelvin test structures; MOSFET; access resistance extraction; device stochastic variations; size 50 nm; wafer; Length measurement; Resistance; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190634
Filename
6190634
Link To Document