Title :
Correlation of optical and electrical test structures for characterisation of copper self-annealing
Author :
Murray, J. ; Smith, S. ; Schiavone, G. ; Terry, J.G. ; Mount, A.R. ; Walton, A.J.
Author_Institution :
Sch. of Chem., Univ. of Edinburgh, Edinburgh, UK
Abstract :
The self-annealing properties at room temperature of electrochemically deposited copper have been investigated for the first time using test structures to simultaneously measure the spatial variation of sheet resistance and film stress with time. The phase changes associated with the self-annealing of copper on 200mm wafers have been observed over a period of 30 hours indirectly through these parameters, mapped across the wafer. In particular, this paper reports the influence of the electroplating current density on the resulting characteristics of the deposited copper.
Keywords :
annealing; copper; current density; electrochemistry; electroplating; phase change materials; copper self-annealing; electrical test structures; electrochemically deposited copper; electroplating current density; film stress; optical test structures; phase changes; room temperature; self-annealing property; sheet resistance; size 200 nm; spatial variation; time 30 hour; Annealing; Density measurement; Electrical resistance measurement; Gain measurement; Nuclear measurements; Optical variables measurement; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190635
