In-situ calibration and verification techniques for the characterization of microwave circuits and devices

This paper demonstrates the implementation on IC and thin film technology of a very broadband In-situ TRRM calibration and verification techniques adequate for the characterization and modeling of microwave devices and structures from the low MHz range to V-band frequencies. The integration of calibration and verification structures on the same substrate as the DUT (Device-Under-Test) not only removes the need for extra de-embedding steps but also allows the generation of calibrated planes inside an IC structure (well beyond the usual probe-pad interface) and the compensation of non-idealities in the calibration standards. Compensation of the non-idealities of the calibration standards is accomplished by studying the response of the T-check and Beatty standard to variations in the real and imaginary parts of the load standard.