DocumentCode
1941989
Title
Development of a novel system for characterizing MOSFET noise in higher frequency regimes
Author
Ohmori, Kenji ; Hasunuma, Ryu ; Yamada, Keisaku
fYear
2012
fDate
19-22 March 2012
Firstpage
169
Lastpage
172
Abstract
We present a novel approach for measuring high-frequency components of the MOSFET noise under DC bias. For this purpose, a probe card equipped with a preamp has been devised so that the signal of the drain current can be amplified with lesser loss. Using the probe card, we demonstrate that the noise properties of MOSFET up to 40 MHz are successfully measured.
Keywords
MOSFET; circuit noise; probes; DC bias; MOSFET noise; drain current signal; high-frequency components; probe card; Floors; Frequency measurement; Logic gates; MOSFET circuits; Noise; Noise measurement; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190639
Filename
6190639
Link To Document