DocumentCode
1942079
Title
Self-heating parameter extraction of power MOSFETs based on transient drain current measurements and on the 2-cell self-heating model
Author
Koh, Risho ; Iizuka, Takahiro
Author_Institution
Technol. Dev. Unit, RENESAS Electron., Kawasaki, Japan
fYear
2012
fDate
19-22 March 2012
Firstpage
191
Lastpage
195
Abstract
Self-heating parameter extraction for circuit simulation model is discussed based on the transient drain current measurement, by using a 18V power MOSFET as a test device. The fitting errors in the conventional one-cell self-heating model have been investigated and the influences of the spread resistance on the transient current are discussed to refine the modeling strategy. A simple two-cell model is also proposed and its excellent fitting capability for wide time ranges is demonstrated.
Keywords
circuit simulation; electric current measurement; power MOSFET; 2-cell self-heating model; circuit simulation model; fitting error; modeling strategy; one-cell self-heating model; power MOSFET; self-heating parameter extraction; spread resistance; transient drain current measurement; two-cell model; voltage 18 V; Capacitance; Heating; Manuals; Oscilloscopes; Power MOSFET; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190644
Filename
6190644
Link To Document