• DocumentCode
    1942119
  • Title

    Process and Model of Short-Gate Diffused InGaAs JFET´s for Integrated Pin - FET Photodetector

  • Author

    Nguyen, L. ; Allovon, M. ; Blanconnier, P. ; Bourdon, B. ; Caquot, E. ; Scavennec, A.

  • Author_Institution
    Centre National d´´Etudes des Telecommunications, Laboratoire de Bagneux, 196, avenue Henri Ravera, 92220 Bagneux France
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    943
  • Lastpage
    946
  • Abstract
    Junction Field Effect Transistors with a micron diffused gate have been fabricated on InGaAs/InP grown by molecular beam epitaxy (MBE). Transconductances higher than 200 mS/mm with a channel doping level of 2.1016 cm¿3 have been measured. A compact model for PIN - FET photodetector has been developed to optimize e signal to noise ratio.
  • Keywords
    Doping; FETs; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Signal to noise ratio; Silicon compounds; Substrates; Wet etching; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1942119