DocumentCode
1942135
Title
Statistical Defectivity Control for VLSI Devices
Author
Traversini, R. ; De Lisio, A. ; Tosi, M. ; Barbuscia, G.
Author_Institution
SGS Microelettronica, Via C. Olivetti, 2, 20041 Agrate Brianza (MI)- Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
927
Lastpage
930
Abstract
A method used in designing test chips for defect monitorinig of VLSI processes is presented. The purpose of the method is to maximize the accuracy of defect density estimations. This is achieved by appropriate sizing of test chip structures. The optimal dimension of test structure is computed using a model relating the confidence interval for the defect density D with the sample size and test structure dimension. The Poisson and negative binomial yield models are used in the calculation. The application to real life VLSI processes is outlined.
Keywords
Condition monitoring; Design methodology; Geometry; Manufacturing; Process control; Solid modeling; Statistical analysis; Statistical distributions; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436796
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