• DocumentCode
    1942135
  • Title

    Statistical Defectivity Control for VLSI Devices

  • Author

    Traversini, R. ; De Lisio, A. ; Tosi, M. ; Barbuscia, G.

  • Author_Institution
    SGS Microelettronica, Via C. Olivetti, 2, 20041 Agrate Brianza (MI)- Italy
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    927
  • Lastpage
    930
  • Abstract
    A method used in designing test chips for defect monitorinig of VLSI processes is presented. The purpose of the method is to maximize the accuracy of defect density estimations. This is achieved by appropriate sizing of test chip structures. The optimal dimension of test structure is computed using a model relating the confidence interval for the defect density D with the sample size and test structure dimension. The Poisson and negative binomial yield models are used in the calculation. The application to real life VLSI processes is outlined.
  • Keywords
    Condition monitoring; Design methodology; Geometry; Manufacturing; Process control; Solid modeling; Statistical analysis; Statistical distributions; Testing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436796