DocumentCode
1942266
Title
Active “multi-fingers”: Test structure to improve MOSFET matching in sub-threshold area
Author
Joly, Y. ; Opez, L. ; Portal, J.-M. ; Aziza, H. ; Bert, Y. ; Julien, F. ; Fornara, P.
Author_Institution
STMicroelectron., Rousset, France
fYear
2012
fDate
19-22 March 2012
Firstpage
225
Lastpage
228
Abstract
Low power analog applications are often designed under threshold and can be degraded by hump effect. This effect is explained through device dimensions and body bias studies. A MOSFET matching improvement in sub-threshold area is demonstrated with active “multi-fingers” test structure.
Keywords
MOSFET; MOSFET matching; active multi-fingers test structure; body bias study; hump effect; sub-threshold area; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190652
Filename
6190652
Link To Document