Title :
Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs
Author :
Bortesi, L. ; Vendrame, L. ; Fantini, P. ; Spessot, A. ; Lacaita, A.L.
Author_Institution :
R&D-Technol. Dev., Micron Technol., Inc., Agrate Brianza, Italy
Abstract :
A methodology for the investigation of CMOS variability using statistical measurements (spot, IV and CV) on single CMOS devices and matched pairs has been presented. Results on 180 nm and 90 nm technologies have been discussed. An extension of the available variability models has been proposed to account for the experimental spread of the absolute threshold voltage values. Variability of carrier mobility and its dependence on halo doping has been pointed out.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; doping; statistical analysis; CMOS devices; CMOS variability; MOSFET; absolute threshold voltage values; carrier mobility; halo doping; size 180 nm; size 90 nm; statistical measurements; Analytical models; Performance evaluation;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190653
