DocumentCode
1942294
Title
Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs
Author
Bortesi, L. ; Vendrame, L. ; Fantini, P. ; Spessot, A. ; Lacaita, A.L.
Author_Institution
R&D-Technol. Dev., Micron Technol., Inc., Agrate Brianza, Italy
fYear
2012
fDate
19-22 March 2012
Firstpage
229
Lastpage
232
Abstract
A methodology for the investigation of CMOS variability using statistical measurements (spot, IV and CV) on single CMOS devices and matched pairs has been presented. Results on 180 nm and 90 nm technologies have been discussed. An extension of the available variability models has been proposed to account for the experimental spread of the absolute threshold voltage values. Variability of carrier mobility and its dependence on halo doping has been pointed out.
Keywords
CMOS integrated circuits; MOSFET; carrier mobility; doping; statistical analysis; CMOS devices; CMOS variability; MOSFET; absolute threshold voltage values; carrier mobility; halo doping; size 180 nm; size 90 nm; statistical measurements; Analytical models; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
1071-9032
Print_ISBN
978-1-4673-1027-7
Type
conf
DOI
10.1109/ICMTS.2012.6190653
Filename
6190653
Link To Document