• DocumentCode
    1942319
  • Title

    Tungsten Silicide Resistors for GaAs MMICs

  • Author

    Allan, D A ; Ng, T K ; Gilbert, M J

  • Author_Institution
    Compound Semiconductor Microelectronics Section, British Telecom Research Laboratories, Ipswich, United Kingdom.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    995
  • Lastpage
    998
  • Abstract
    Tungsten silicide resistors in the range 50-300 ohm/square have been deposited on GaAs by rf sputtering and patterned by etching in an SF6 plasma. The stability of the resistors has been demonstrated by accelerated ageing at elevated temperatures. A change in resistance of less than 0.3% after 1000 hours at 125°C was observed when a Si3N4 passivation layer was used to encapsulate the resistors.
  • Keywords
    Gallium arsenide; MMICs; Plasma accelerators; Plasma applications; Plasma temperature; Resistors; Silicides; Sputter etching; Sputtering; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1942319