DocumentCode
1942365
Title
MESFETs on N-GaInAs with Barrier Enhanced Schottky Gates
Author
Fernholz, G. ; Lange, W. ; Westphalen, R. ; Balk, P. ; Beneking, H.
Author_Institution
Institute of Semiconductor Electronics, Aachen Technical University, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
999
Lastpage
1001
Abstract
Enhancement of Schottky barrier height on n-type GaInAs has been achieved using Be implantation at low energies. These diodes have been used as Schottky-gates for the fabrication of n-channel MESFETs on GaInAs.
Keywords
Atomic layer deposition; Atomic measurements; Electric variables measurement; Fabrication; Gain measurement; Indium phosphide; MESFETs; Schottky diodes; Thickness measurement; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436805
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