Title :
MESFETs on N-GaInAs with Barrier Enhanced Schottky Gates
Author :
Fernholz, G. ; Lange, W. ; Westphalen, R. ; Balk, P. ; Beneking, H.
Author_Institution :
Institute of Semiconductor Electronics, Aachen Technical University, FRG
Abstract :
Enhancement of Schottky barrier height on n-type GaInAs has been achieved using Be implantation at low energies. These diodes have been used as Schottky-gates for the fabrication of n-channel MESFETs on GaInAs.
Keywords :
Atomic layer deposition; Atomic measurements; Electric variables measurement; Fabrication; Gain measurement; Indium phosphide; MESFETs; Schottky diodes; Thickness measurement; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
