Nano CV probe characterization analysis comparison with conventional CV probe pad analysis

The introduction of nano CV characterization of discrete MOSFET devices and the method of performing scanning capacitance imaging has been previously presented.¹ By nano probing at CA contact level discrete MOSFET devices that are routinely analyzed at probe pad level with conventional CV measurements, a means of comparison can be established to compare the results obtained by both methods. More importantly, the nano CV measurements obtained at CA contact level can be validated by this comparison^2-6 This paper will describe nano CV measurements of discrete devices and show comparison results obtained at probe pad level that confirms the validity and accuracy of nano CV measurements.