Title :
Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links
Author :
Lovejoy, M.L. ; Patrizi, G.A. ; Enquist, P.M. ; Rose, B.H. ; Slater, D.B., Jr. ; Shul, R.J. ; Carson, R.F. ; Craft, D.C. ; Rieger, D.J. ; Hutchby, J.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers are designed to operate from 980 nm to over 1.3 /spl mu/m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of /spl sim/10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.
Keywords :
III-V semiconductors; bipolar transistor circuits; data communication; data communication equipment; digital communication; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical receivers; p-i-n photodiodes; 10 mW; 3.3 V; 800 Mbit/s; 980 nm to 1.3 micron; CMOS direct interface; HBTs; InGaAs-InP; SPICE; circuit topographies; discrete HBTs; free-space optical links; guided-wave optical links; heterojunction bipolar transistors; high-speed photoreceiver; highly-parallel optical data links; large signal operation; low-power photoreceivers; p-i-n diodes; power dissipation; Circuits; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical design; Optical receivers; P-i-n diodes; SPICE; Surfaces;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528989
