Title :
Low-Noise Bulk Unipolar Devices in Si and GaAs
Author :
Beneking, H. ; Cloos, J.-M. ; Fernholz, G. ; Marso, M. ; Roentgen, P. ; Vescan, L.
Author_Institution :
Institute of Semiconductor Electronics, Aachen Technical University, Sommerfeldstr. 5100-Aachen; University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor
Abstract :
Low-temperature vapour phase epitaxy was applied to fabricate multilayer structures like camel diodes and camel transistors. Using the Low Pressure Vapour Phase Epitaxy (LP-VPE) silicon camel diodes with a conversion loss as low as 6 dB at 12 GHz and a noise figure of 7 dB were realized. GaAs hot electron transistors were fabricated by Organo-Metallic Vapour Phase Epitaxy (OM-VPE).
Keywords :
Doping; Electrons; Epitaxial growth; Fabrication; Gallium arsenide; Gases; Inductors; Nonhomogeneous media; Semiconductor diodes; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
