DocumentCode :
1942441
Title :
Emitter Concentration and Interface Effects in the Base-Emitter Characteristics of A1GaAs/GaAs Heterojunction Bipolar Transistors
Author :
Cámara, P. ; Muñoz, E. ; Izpura, I. ; Lablanca, J. ; Lapeña, E. ; Pate, M.A. ; Hill, G. ; Mistry, P. ; Roberts, J.S. ; Hall, H.Y.
Author_Institution :
ETSI Telecomunicación, Univ. Politécnica Madrid, C. Universitaria 28040-Madrid , Spain
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
979
Lastpage :
982
Keywords :
Bipolar transistors; Doping; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Knee; MOCVD; Molecular beam epitaxial growth; Telecommunication standards; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436808
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1942441
بازگشت