Integrating optical receiver transplanted by epitaxial lift off

Author

Morf, T. ; Brys, C. ; De Dobbelaere, P. ; Van Daele, Peter ; Demeester, P. ; Martinson, T. ; Bachtold, W.

Author_Institution

Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

189

Lastpage

192

Abstract

A GaAs integrating optical receiver has been designed and realized using a commercial foundry process. The receiver was then transplanted by epitaxial lift off (ELO) onto an InP substrate. This technology allows the monolithical integration of previously incompatible materials onto one chip. To our knowledge the chip described is the most complex chip that has been transplanted by ELO. The integrating receiver described here presents a novel circuit topology to integrate optical input power.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; integrating circuits; optical receivers; GaAs; InP; InP substrate; commercial foundry process; epitaxial liftoff; fabrication process; incompatible materials; integrating optical receiver; monolithical integration; receiver transplantation; Etching; Foundries; Gallium arsenide; High speed optical techniques; Indium phosphide; Optical films; Optical receivers; Optical signal processing; Substrates; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528991

Filename

528991