Title :
Integrating optical receiver transplanted by epitaxial lift off
Author :
Morf, T. ; Brys, C. ; De Dobbelaere, P. ; Van Daele, Peter ; Demeester, P. ; Martinson, T. ; Bachtold, W.
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A GaAs integrating optical receiver has been designed and realized using a commercial foundry process. The receiver was then transplanted by epitaxial lift off (ELO) onto an InP substrate. This technology allows the monolithical integration of previously incompatible materials onto one chip. To our knowledge the chip described is the most complex chip that has been transplanted by ELO. The integrating receiver described here presents a novel circuit topology to integrate optical input power.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; integrating circuits; optical receivers; GaAs; InP; InP substrate; commercial foundry process; epitaxial liftoff; fabrication process; incompatible materials; integrating optical receiver; monolithical integration; receiver transplantation; Etching; Foundries; Gallium arsenide; High speed optical techniques; Indium phosphide; Optical films; Optical receivers; Optical signal processing; Substrates; Water pollution;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528991
