A Computer Aided Interpretation of Mobility Profile Measurements in Gallium Arsenide FET Structures

Some semiquantitative correlations among electron mobility profile trend, background acceptor and donor concentrations and compensation ratio in gallium arsenide apitaxial FET structures were ascertained from the comparison of several experimental and calculated data. The results obtained by this analysis are a useful tool in the electrical characterization of non intentionally doped buffer layers where high resistivity and interface (or surface) effects make quite difficult the interpretation of the most used techniques as differential C-V, magnetotransconductance and Van der Pauw measurements.