A packaged broadband monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology

Author

Yu, R. ; Beccue, S. ; Zampardi, P. ; Pierson, R. ; Petersen, A. ; Wang, K.C. ; Bowers, J.

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

197

Lastpage

200

Abstract

Broadband monolithic variable gain amplifiers (VGAs) were designed and fabricated using an AlGaAs/GaAs HBT technology. The VGAs were housed in high-speed packages. The packaged VGAs provided 10-16 dB adjustable gain with approximately /spl plusmn/1 dB gain variations and constant group delay in the DC-26 GHz band, and showed better than 10 dB input/output return losses in the amplifier passband. These VGAs can be used in fiber optic transmission systems with data rates up to 30 GBit/s.

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit packaging; wideband amplifiers; 0 to 26 GHz; 10 dB; 10 to 16 dB; 30 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; broadband monolithic variable gain amplifier; design; fabrication; fiber optic transmission system; group delay; high-speed package; return loss; Broadband amplifiers; Delay; Gain; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical fibers; Optical losses; Packaging; Passband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528993

Filename

528993