Title :
Substrate Influences on the Activation of Ion-Implanted Si in GaAs
Author :
Schnell, R.D. ; Schink, H.
Author_Institution :
Siemens AG, Corporate Research and Development, D-8000 Mÿnchen 83, P.O. Box 830952, F.R.G.
Abstract :
The influence of substrate material on Si-implanted CV-profiles is demonstrated on s.i. LEC grown GaAs. Local activation is affected by stoichiometry variations near dislocations. For higher concentrations the variations increase due to saturation effects. By co-implantation of As and enhanced implantation damage the activation is decreased and the dislocation influence increased.
Keywords :
Capacitance measurement; Circuits; Doping profiles; Gallium arsenide; Large scale integration; Microscopy; Schottky diodes; Shape control; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
