A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator

Author

Wong, T.Y.K. ; Freundorfer, A.P. ; Beggs, B.C. ; Sitch, J.E.

Author_Institution

Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

201

Lastpage

204

Abstract

High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.

Keywords

HF amplifiers; III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; differential amplifiers; distributed amplifiers; driver circuits; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; optical communication equipment; power amplifiers; 10 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier; Bell-Northern Research; III-V Mach-Zehnder modulator; distributed output stage; functional probe yield; lightwave communication; Delay; Distributed amplifiers; Drives; Frequency; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Optical interferometry; Phase modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528994

Filename

528994