Title :
Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs
Author :
Feng, M. ; Scherrer, D.R. ; Apostolakis, P.J. ; Middleton, J.R. ; McPartlin, M.J. ; Lauterwasser, B.D. ; Oliver, J.D., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit noise; ion implantation; microwave amplifiers; millimetre wave amplifiers; 0.25 mum; 2 to 3 dB; 27 to 34 GHz; 30 dB; GaAs; Ka-band monolithic low noise amplifiers; T-gates; direct ion implanted GaAs MESFETs; five stage MMIC amplifier; gain performance; low cost direct ion implantation technology; millimeter-wave monolithic integrated circuits; noise performance; self-biasing; Costs; Decision support systems; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFETs; MIMICs; MMICs; Power amplifiers; Power supplies;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528995
