Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs

Author

Feng, M. ; Scherrer, D.R. ; Apostolakis, P.J. ; Middleton, J.R. ; McPartlin, M.J. ; Lauterwasser, B.D. ; Oliver, J.D., Jr.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

207

Lastpage

209

Abstract

Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit noise; ion implantation; microwave amplifiers; millimetre wave amplifiers; 0.25 mum; 2 to 3 dB; 27 to 34 GHz; 30 dB; GaAs; Ka-band monolithic low noise amplifiers; T-gates; direct ion implanted GaAs MESFETs; five stage MMIC amplifier; gain performance; low cost direct ion implantation technology; millimeter-wave monolithic integrated circuits; noise performance; self-biasing; Costs; Decision support systems; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFETs; MIMICs; MMICs; Power amplifiers; Power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528995

Filename

528995