DocumentCode
1942614
Title
Study on Current Transport Mechanism in Amorphous SiC Emitter HBT
Author
Sasaki, Klmlhiro ; Furukawa, Seijiro
Author_Institution
Department of Applied Electronics, Graduate school of Sci, & Eng., Tokyo Inst. of Tech., 4259 Nagatsuda, Midori-ku, Yokohama 227, Japan
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
1055
Lastpage
1058
Abstract
Current transport model and current gain degradation mechanisms of a silicon heterojunction bipolar transistor with amorphous SiC emitter are discussed by observing various characteristics of amorphous SiC films as the emitter material. Under such study current gain is remarkably enhanced by using low resistance micro-crystalline Si, and current gain as high as 480 has been obtained.
Keywords
Amorphous materials; Conductivity; Fabrication; Helium; Heterojunction bipolar transistors; Hydrogen; Optical films; Plasma measurements; Semiconductor films; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436815
Link To Document