Title :
Study on Current Transport Mechanism in Amorphous SiC Emitter HBT
Author :
Sasaki, Klmlhiro ; Furukawa, Seijiro
Author_Institution :
Department of Applied Electronics, Graduate school of Sci, & Eng., Tokyo Inst. of Tech., 4259 Nagatsuda, Midori-ku, Yokohama 227, Japan
Abstract :
Current transport model and current gain degradation mechanisms of a silicon heterojunction bipolar transistor with amorphous SiC emitter are discussed by observing various characteristics of amorphous SiC films as the emitter material. Under such study current gain is remarkably enhanced by using low resistance micro-crystalline Si, and current gain as high as 480 has been obtained.
Keywords :
Amorphous materials; Conductivity; Fabrication; Helium; Heterojunction bipolar transistors; Hydrogen; Optical films; Plasma measurements; Semiconductor films; Silicon carbide;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
