Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process

Author

Lin, E.W. ; Wang, H. ; Chang, K.W. ; Tran, L. ; Cowles, J. ; Block, T. ; Lo, D.C.W. ; Dow, G.S. ; Oki, A. ; Streit, D. ; Allen, B.R.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

218

Lastpage

221

Abstract

This paper describes the successful development of monolithic millimeter-wave frequency converter circuits using an InP HBT-compatible Schottky-diode process. A 94 GHz singly-balanced mixer and a 47-to-94 GHz passive doubler have been fabricated and tested, and both designs have attained admirable conversion loss with low input drive requirements. The mixer has also demonstrated significant improvement in noise figure at low intermediate frequencies compared to a GaAs HEMT diode mixer. At an IF of 1 MHz, the InP HBT diode mixer achieved a DSB noise figure of 16 dB, which is a 17 dB improvement compared to the GaAs HEMT diode mixer.

Keywords

III-V semiconductors; Schottky diode mixers; Schottky diodes; aluminium compounds; bipolar MIMIC; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit noise; integrated circuit testing; millimetre wave frequency convertors; millimetre wave mixers; 16 dB; 47 GHz; 94 GHz; DSB noise figure; InAlAs-InGaAs-InP; InAlAs/InGaAs HBT layer structure; InP; InP HBT diode mixer; InP HBT-compatible Schottky-diode process; Q- to W-band doubler; conversion loss; low input drive; low intermediate frequencies; monolithic W-band mixer; monolithic millimeter-wave Schottky-diode-based frequency converters; passive doubler; singly-balanced mixer; Circuit testing; Frequency conversion; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave circuits; Mixers; Noise figure; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528998

Filename

528998