Title :
1997 digest of the ieee/leos summer topical meeting: vertical-cavity lasers/technologies for a global information infrastructure/wdm components technology/advanced semiconductor lasers and applications/gallium nitride materials, processing, and devices [f
Abstract :
Presents the front matter and table of contents from the conference proceedings.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; optical fibre networks; quantum well lasers; semiconductor laser arrays; semiconductor lasers; surface emitting lasers; wavelength division multiplexing; wide band gap semiconductors; GaN; GaN devices; GaN processing; GaN substrate issues; WDM components technology; access; advanced semiconductor lasers; application drivers; data links; data storage; datacom; device theory; epitaxial growth; filters; gallium nitride materials; global information infrastructure; high brightness sources; high power sources; high speed devices; hybrid systems; laser arrays; long wavelength VCSEL; material technologies; microwave-optical systems; mid-IR sources; network strategies; nitride based devices; optical amplifiers; optical gain; optical networking; semiconductor laser applications; single mode applications; spectroscopic applications; switching; switching technologies; vertical cavity lasers; wavelength control; wavelength routing/conversion; wide-bandgap materials;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619076
