DocumentCode
1942633
Title
AlGaAs/GaAs Modulation Doped FETs for Ultra High Speed Signal Processing Applications
Author
Christou, A.
Author_Institution
Research Center of Crete and Physics Department, University of Crete, Irakilo, Crete, Greece.
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
1037
Lastpage
1044
Abstract
MESFET and MODFET device technologies are reviewed in terms of device characteristics and processing difficulties. The MODEET discussion is then extended to include the planar self-aligned processes. The requirements for molecular beam epitaxy are presented. The results for ring oscillators are compared as well as a number of other device/circuit results.
Keywords
Acoustical engineering; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFET circuits; Molecular beam epitaxial growth; Signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436816
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