Title :
AlGaAs/GaAs Modulation Doped FETs for Ultra High Speed Signal Processing Applications
Author_Institution :
Research Center of Crete and Physics Department, University of Crete, Irakilo, Crete, Greece.
Abstract :
MESFET and MODFET device technologies are reviewed in terms of device characteristics and processing difficulties. The MODEET discussion is then extended to include the planar self-aligned processes. The requirements for molecular beam epitaxy are presented. The results for ring oscillators are compared as well as a number of other device/circuit results.
Keywords :
Acoustical engineering; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MESFETs; MODFET circuits; Molecular beam epitaxial growth; Signal processing;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
