Title :
Double Self Aligned Bipolar Transistors using Salicide Contacts
Author :
Kabza, H. ; Reisch, M. ; Probst, V. ; Böhm, W. ; Fertsch, J. ; Schaber, H. ; Eggers, H.
Author_Institution :
Siemens AG, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, FRG
Abstract :
A new double self aligned fabrication process for bipolar transistors is presented by applying the self aligned silicide (salicide) process using Pt to poly-Si self aligned devices. Very low sheet resistivities for the external base region and therefore low base resistances are obtained. Temperature stability of the devices for annealing at 700°C for 60 min. is demonstrated. No silicide bridging is observed.
Keywords :
Bipolar transistors; Circuit stability; Conductivity; Electrodes; Etching; Fabrication; Microelectronics; Silicidation; Silicides; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
