Title :
60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT
Author :
Saito, T. ; Hidaka, N. ; Ono, K. ; Ohashi, Y. ; Shimura, T.
Author_Institution :
Adv. Millimeter Wave Technol. Co. Ltd., Kawasaki, Japan
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
We have designed, fabricated, and evaluated an InGaP/InGaAs/GaAs HEMT 60-GHz monolithic image-rejection downconverter. The downconverter consists of a four-stage low-noise amplifier and a single-balanced image-rejection active-drain mixer. The HEMTs used in the downconverter have gates of 0.1 /spl mu/m long and 100 /spl mu/m wide. The downconverter has a maximum conversion gain of 22.9 dB at 61 GHz and a minimum noise figure of 3.16 dB at 58.5 GHz with 5 dBm LO power input and 140 MHz IF output. These characteristics are, to our knowledge, the best report of an MMIC downconverter using an image-rejection active-drain mixer in this frequency range. This is a significant improvement from our previous report results in terms of the noise figure and conversion gain.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; 0.1 micron; 100 micron; 22.9 dB; 3.16 dB; 60 GHz; HEMT; InGaP-InGaAs; MMIC; four-stage low-noise amplifier; image-rejection downconverter; maximum conversion gain; minimum noise figure; single-balanced image-rejection active-drain mixer; Frequency; Gain; Gallium arsenide; HEMTs; Image converters; Indium gallium arsenide; Low-noise amplifiers; MMICs; Mixers; Noise figure;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528999
