Title :
MMIC-based W-band Dicke switched direct-detection receiver
Author :
Lo, D.C.W. ; Lin, E.W. ; Wang, H. ; Biedenbender, M. ; Lai, R. ; Ng, G. ; Dow, G.S. ; Allen, B.R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
We have demonstrated a W-band Dicke switched direct-detection receiver based on advanced GaAs MMIC process technology. The receiver consists of two MMICs, a W-band six-stage balanced switching low noise amplifier and a unique W-band detector with vertical dot diode structure. The balanced switching low noise amplifier has achieved a gain of 37 dB from 90 to 95 GHz and an average isolation of 15 dB between on and off from 85 to 95 GHz. Based on hot/cold load calibration, the constructed Dicke switched direct-detection receiver has achieved a minimum resolvable temperature of 0.5 K with 10 ms integration at 50 KHz switching rate.
Keywords :
III-V semiconductors; MIMIC; calibration; differential amplifiers; gallium arsenide; millimetre wave measurement; millimetre wave receivers; radiometry; 37 dB; 85 to 95 GHz; Dicke switched direct-detection receiver; GaAs; MMIC process technology; W-band; average isolation; hot/cold load calibration; minimum resolvable temperature; six-stage balanced switching low noise amplifier; vertical dot diode structure; Calibration; Communication system control; Envelope detectors; Gain; Gallium arsenide; Isolation technology; Low-noise amplifiers; MMICs; Space technology; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529000
