Title :
High efficiency 850 nm wavelength GaAs VCSELs
Author :
Michalzik, R. ; Jager, R. ; Weigl, B. ; Grabherr, M. ; Jung, C. ; Reiner, G. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We report on the optimization of selectively oxidized VCSELs incorporating GaAs quantum wells for multimode emission around 850 nm wavelength. Devices with active diameters between 5 and 12 /spl mu/m show maximum wallplug efficiencies exceeding 55%. Continuous wave operation is achieved up to +185/spl deg/C and the maximum single-mode output power corresponding to 30 dB sidemode suppression ratio is increased to 2.25 mW with layer structures exhibiting reduced index guiding of the optical wave.
Keywords :
III-V semiconductors; gallium arsenide; infrared sources; laser cavity resonators; laser modes; laser transitions; optimisation; quantum well lasers; surface emitting lasers; 185 C; 2.25 mW; 5 to 12 mum; 55 percent; 850 nm; CW lasers; GaAs; GaAs VCSELs; GaAs quantum well lasers; active diameters; continuous wave operation; high efficiency; layer structures; maximum single-mode output power; maximum wallplug efficiencies; multimode emission; optical wave; optimization; reduced index guiding; selectively oxidized; sidemode suppression ratio; Current supplies; Electron emission; Gallium arsenide; Heat sinks; Power conversion; Power generation; Power lasers; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619082
