Conversion gain enhancement technique for ultra low power Gilbert cell down mixers [GaAs MESFET ICs]

A novel technique for conversion gain enhancement for ultra low power Gilbert cell down mixers is presented. It proposes a splitting of the signal current and the DC current by the use of current injection resistors and simultaneous feedback stabilization of the bias point. Thus, very high value load resistors can be applied enhancing the conversion gain considerably without affecting the typical advantages of the Gilbert cell topology. Using this technique, a GaAs down mixer for L-band applications was implemented having more than 10 dB voltage conversion gain with a current consumption of less than 300 /spl mu/A from a 2.7 V battery supply.