Title :
Self-pulsating VCSEL with controllable quantum-well saturable absorber
Author :
Lim, S.F. ; Hudgings, J.A. ; Li, G.S. ; Yuen, W. ; Lau, K.Y. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We experimentally demonstrate the first self-pulsating VCSEL with a controllable quantum-well saturable absorber. Self-pulsation frequencies as high as 2 GHz were obtained. Self-pulsating lasers have proven extremely useful in applications where elimination of optical feedback and high-speed driving circuitry is needed. In this work, we present the first demonstrated InGaAs DBR QW VCSEL with self-pulsations occurring through a voltage-controlled saturable absorber.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical saturable absorption; quantum well lasers; semiconductor quantum wells; InGaAs; InGaAs DBR QW VCSEL; controllable quantum-well saturable absorber; self-pulsating VCSEL; self-pulsating lasers; self-pulsation frequencies; voltage-controlled saturable absorber; Distributed Bragg reflectors; Feedback circuits; Frequency; Indium gallium arsenide; Laser feedback; Optical feedback; Quantum well lasers; Quantum wells; Ultraviolet sources; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619086
