Title :
Luminescence from Si-based materials and devices
Author :
Campbell, J.C. ; Li, K.H. ; Tsai, C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
While numerous luminescence effects have been reported for Si-based materials, with few exceptions the efficiencies have been extremely low. The observation of strong, room-temperature, visible emission from porous Si has renewed interest in and stimulated research on light emission from column IV materials. This paper reviews some of the accomplishments that may presage the development of Si-based light emitters
Keywords :
electroluminescence; elemental semiconductors; light emitting devices; luminescent devices; silicon; Si; Si-based devices; Si-based light emitters; Si-based materials; column IV materials; electroluminescence; light emission; luminescence effects; porous Si; review; strong room-temperature visible emission; Crystalline materials; Crystallization; Electroluminescence; Impurities; Luminescence; Nanostructures; Optical materials; Photoluminescence; Radiative recombination; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303065
