Title :
Low phase noise millimeter-wave frequency sources using InP based HBT technology
Author :
Wang, H. ; Chang, K.W. ; Tran, L. ; Cowles, J. ; Block, T. ; Lo, D.C.W. ; Dow, G.S. ; Oki, A. ; Streit, D. ; Allen, B.R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A family of millimeter-wave sources based on InP HBT technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode VCOs, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC DRO in conjunction with a GaAs based HEMT MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBTs.
Keywords :
1/f noise; III-V semiconductors; MMIC oscillators; bipolar MIMIC; dielectric resonator oscillators; frequency multipliers; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 1/f noise; 40 to 95 GHz; HBT technology; InP; MMIC DRO; MMIC frequency quadrupler; MMIC fundamental mode VCOs; W-band output amplifiers; millimeter-wave frequency sources; phase noise; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; Millimeter wave technology; Millimeter wave transistors; Phase noise; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529008
