Title :
Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors
Author :
Sugeng, B.R.A. ; Wei, C.J. ; Hwang, J. C M ; Song, J.I. ; Hong, W.P. ; Hayes, J.R.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
The barrier effects in InP based double heterojunction bipolar transistors have been investigated both theoretically and experimentally. It was found that the gradual saturation of collector current with increasing collector voltage was caused by the collector-base heterojunction barrier. The gain compression with increasing base current was caused by electron accumulation at the collector-base heterojunction. These effects have been included in terms of nonlinear currents and capacitances in an equivalent circuit model for the prediction of DHBT large signal performance. By using an InAlAs emitter and an InP collector with an InGaAs spacer to alleviate these undesirable effects, improvement in microwave power performance was verified
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; power transistors; semiconductor device models; solid-state microwave devices; InP-InGaAs-InAlAs; collector current; collector voltage; collector-base heterojunction barrier; double heterojunction bipolar transistors; electron accumulation; equivalent circuit model; gain compression; gradual saturation; junction barrier effects; large signal performance; microwave power performance; nonlinear capacitances; nonlinear currents; Capacitance; DH-HEMTs; Double heterojunction bipolar transistors; Electrons; Equivalent circuits; Indium compounds; Indium gallium arsenide; Indium phosphide; Predictive models; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303068
