Title :
A 50% efficiency 8 W C-band PHEMT power MMIC amplifier
Author :
White, P.M. ; O´Leary, T.M.
Author_Institution :
Adv. Device Center, Raytheon Co., Andover, MA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A fully monolithic PHEMT power amplifier is presented which provides 8 W at 50% power added efficiency and 24 dB associated gain over a 4.3 to 5.1 GHz bandwidth in a 25 ohm system. Half-size chips deliver 4 W into 50 ohms at similar gain and efficiency. The approach to achieving high efficiency in this first-pass design, by providing proper harmonic terminations for near class-F operation, is described.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; microwave power amplifiers; power amplifiers; 24 dB; 25 ohm; 4.3 to 5.1 GHz; 50 percent; 8 W; C-band; PHEMT power MMIC amplifier; bandwidth; class-F operation; first-pass design; gain; half-size chip; harmonic terminations; power added efficiency; Assembly; Bandwidth; Gain; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; PHEMTs; Power amplifiers; Radio frequency;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529010
