InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

Author

Cowles, John C. ; Chen, W.L. ; Munns, G.O. ; Haddad, G.T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

62

Lastpage

68

Abstract

InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain β remains high in both structures. Microwave measurements performed on the DHBT reveal that f_t increases monotonically with J_c up to at least 10⁵ A/cm² showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications

Keywords

aluminium compounds; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave measurement; power transistors; semiconductor growth; solid-state microwave devices; 210 mV; 8 V; InAlAs-InGaAs-InGaAsP; breakdown voltage; chemical beam epitaxy; collector emitter offset voltage; common emitter current gain; double heterojunction bipolar transistors; high power applications; microwave measurements; precollector; Breakdown voltage; Chemicals; Double heterojunction bipolar transistors; Epitaxial growth; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Microwave measurements; Molecular beam epitaxial growth; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303069

Filename

303069