Yield-Performance Considerations for Ion-Implanted GaAs Integrated Circuits based on Substrate Material Properties

In this article we will illustrate, in terms of yield-performance considerations, how for conventional annealing techniques the doped LEC materials (i.e. lightly Cr or In-doped) prove to be better than the undoped material, primarly because of the higher yield capability, and that before full advantage can be taken from the potentially better undoped material then either an improved annealing technique and/or ingot annealed material must be considered.