Pseudomorphic Ku-band GaAs HFET linearizer preamplifier front end for satellite TWT-amplifiers

Author

Narozny, P. ; Tobler, H. ; Kornfeld, G.K. ; Nunn, R.A. ; Adelseck, B. ; Ludwig, M. ; Eggers, G.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

292

Lastpage

295

Abstract

A Ku-band GaAs Linearizer Preamplifier Front End (LFE) has been developed for satellite TWT-amplifiers. The LFE is build in hybrid and pseudomorphic HFET MMIC technology. A variable gain MMIC amplifier, two medium power amplifier MMICs, and a power amplifier MMIC are integrated in the Front End. The LFE has been integrated with the short traveling wave tube (STWT). An improvement of 10 dB in the 3rd order intermodulation distance was measured for the LFE/TWT-system.

Keywords

III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; hybrid integrated circuits; linearisation techniques; preamplifiers; satellite communication; travelling wave amplifiers; travelling wave tubes; 3rd order intermodulation distance; GaAs; Ku-band; MMIC technology; linearizer preamplifier front end; medium power amplifier MMICs; pseudomorphic HFET; satellite TWT amplifiers; short traveling wave tube; variable gain MMIC amplifier; Artificial satellites; Costs; Gallium arsenide; HEMTs; Linearity; MMICs; MODFETs; Noise figure; Power amplifiers; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.529014

Filename

529014