Title :
Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs
Author :
Bayraktaroglu, B. ; Fitch, R. ; Barrette, J. ; Scherer, R. ; Kehias, L. ; Huang, C.I.
Author_Institution :
Wright Lab., Solid State Electron. Directorate, Wright-Patterson AFB, OH, USA
Abstract :
Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitation (10 mW/μm2 output power density at 10 GHz with 0.6 W CW output power, 7.1 dB gain and 60% PAE) was attained. The design of the HBT was based on a detailed electro-thermal device analysis which revealed the necessity to provide an effective heat transfer path between heat sources in a multi-emitter power device. Excess heat was transferred out of the device using thermal shunt and thermal lens techniques. The thermal resistance of the device was lowered by a factor of 2.5-3 compared to conventional devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; thermal resistance; 0.6 W; 10 GHz; 7.1 dB; AlGaAs-GaAs; electro-thermal device analysis; fabrication techniques; heat sources; heat transfer path; heterojunction bipolar transistors; microwave power HBTs; multi-emitter power device; output power density; power density performance; thermal lens techniques; thermal resistance; thermal shunt; thermally-stable operation; Electromagnetic heating; Fabrication; Gain; Gallium arsenide; Heat transfer; Heterojunction bipolar transistors; Microwave theory and techniques; Power generation; Thermal lensing; Thermal resistance;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303072
