A Q-band 1 watt 30% power-added-efficiency hetero-junction FET

Author

Arai, S. ; Mizuno, H. ; Tanaka, H. ; Yoshinaga, H. ; Masuda, K. ; Abe, B. ; Kawano, M. ; Tokuda, H. ; Shibata, K.

Author_Institution

Komukai Works, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

296

Lastpage

299

Abstract

A series of Q-band hetero-junction power FETs with gate widths of 400, 800, 1600 and 2400 /spl mu/m has been developed. The FETs use an n-type GaAs layer as a channel with an AlGaAs layer as a Schottky contact layer. Each FET has two cell configuration with monolithically integrated 1/4 wavelength impedance transformer for the input and output matching networks. The 2400 /spl mu/m-gate-width device delivered an output power of 30 dBm with 4.4 dB gain and 30.1% power-added-efficiency.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; impedance matching; millimetre wave field effect transistors; millimetre wave power transistors; power field effect transistors; semiconductor device reliability; 1 W; 1/4 wavelength impedance transformer; 30 to 30.1 percent; 4.4 dB; 400 to 2400 micron; AlGaAs Schottky contact layer; EHF; GaAs-AlGaAs; MM-wave device; Q-band; heterojunction FET; input matching network; monolithically integrated impedance transformer; n-type GaAs layer channel; output matching network; power HFETs; power-added-efficiency; two cell configuration; Capacitance; FETs; Fingers; Gallium arsenide; Impedance matching; Output feedback; Schottky barriers; Temperature distribution; Transconductance; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.529015

Filename

529015